A professional research business of atmospheric plasma
Etching
Etching is a process of leaving only the necessary parts and cutting away the unnecessary parts. Among them, the dry etching, plasma
process, is a method of etching the film to be etched by chemical and physical reactions with plasma.
Nitride Etching
Sample: SiNx on Wafer
Treatment Speed: 10mm/s, 40 times, 200mm length
Before
After
Nitride Etching
Si₃N₄ films: 5cm x 5cm x 2,000A
Before
After
Ashing Etching
When removing unnecessary PR after photolithography
Wafer Ashing
Wafer : 6inch
PR thickness : 1um
PR Type : Positive (Model: GSR-601)
PR thickness : 1um
PR Type : Positive (Model: GSR-601)
Before
After
Color filter / OC layer Ashing
Sample : LCD Color filter
Removal layer : Color filter / OC layer
Removal layer : Color filter / OC layer
Before
After