Etching is a process of leaving only the necessary parts and cutting away the unnecessary parts. Among them, the dry etching, plasma
process, is a method of etching the film to be etched by chemical and physical reactions with plasma.
Nitride Etching
Sample: SiNx on Wafer
Treatment Speed: 10mm/s, 40 times, 200mm length
Before
After
Nitride Etching
Si₃N₄ films: 5cm x 5cm x 2,000A
Before
After
Ashing Etching
When removing unnecessary PR after photolithography