Etching process

에칭은 ” a process of cutting off unnecessary parts, leaving only the necessary parts“and among them, the dry etching plasma process is a method of etching the film by chemical and physical reactions of the film to be etched with plasma

APP Plasma Technology

Low power / High Speed / No Particle / Simple system

Nitride Etching
  • Sample: SiNx on Wafer
  • Treatment Speed: 10mm/s, 40 times, 200mm length
Etching Volume: 3000A

Before

After
Nitride Etching
  • Si₃N₄ films: 5cm x 5cm x 2,000A

Bebore

After

Ashing process

Photolithography After that, when you take off the unnecessary PR,

Wafer Ashing
  • Wafer : 6inch
  • PR thickness : 1um
  • PR 종류 : Positive (Model: GSR-601)

Before

After
Color filter / OC layer Ashing
  • Sample : LCD Color filter
  • Removal layer : Color filter / OC layer

Before

After